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| savantic semiconductor product specification silicon npn power transistors 2sd985 2SD986 d escription with to-126 package complement to type 2sb794/795 darlington high dc current gain low collector saturation voltage applications for low frequency power amplifier and power switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v 2sd985 60 v ceo collector-emitter voltage 2SD986 open base 80 v v ebo emitter -base voltage open collector 8 v i c collector current 1.5 a i cm collector current-peak 3.0 a i b base current 0.15 a t a =25 1.0 p t total power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2sd985 2SD986 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =1.0a; i b =1.0ma 1.5 v v besat base-emitter saturation voltage i c =1.0a; i b =1.0ma 2.0 v 2sd985 v cb =60v; i e =0 i cbo collector cut-off current 2SD986 v cb =80v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 2.0 ma h fe-1 dc current gain i c =0.5a ; v ce =2v 1000 h fe-2 dc current gain i c =1.0a ; v ce =2v 2000 30000 switching times t on turn-on time 0.5 s t s storage time 1.0 s t f fall time i c =1.0a;i b1 =-i b2 =1.0ma v cc =50v; r l =50 b 1.0 s h fe-2 classifications m l k 2000-5000 4000-10000 8000-30000 downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors 2sd985 2SD986 package outline fig.2 outline dimensions downloaded from: http:/// |
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